Invention Grant
- Patent Title: Manufacturing method of organic thin film transistor
-
Application No.: US16254742Application Date: 2019-01-23
-
Publication No.: US10756280B2Publication Date: 2020-08-25
- Inventor: Bo Liang , Wei Wang
- Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Wuhan, Hubei
- Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Wuhan, Hubei
- Agent Leong C. Lei
- Main IPC: H01L51/05
- IPC: H01L51/05 ; H01L51/00 ; H01L27/32

Abstract:
A method for manufacturing an organic thin film transistor includes steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with an organic solution and heating the graphene layer to form organic semiconductor nano lines on the surface of the graphene layer; and transferring the organic semiconductor nano lines to a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by the graphene layer. The semiconductor layer having organic thin film transistors is formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed simultaneously on the surface of the metal substrate with a large area.
Public/Granted literature
- US20190157593A1 MANUFACTURING METHOD OF ORGANIC THIN FILM TRANSISTOR Public/Granted day:2019-05-23
Information query
IPC分类: