Invention Grant
- Patent Title: Overcurrent detection circuit, semiconductor apparatus, and power supply apparatus
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Application No.: US15833327Application Date: 2017-12-06
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Publication No.: US10756530B2Publication Date: 2020-08-25
- Inventor: Toshikazu Kuwano
- Applicant: SEIKO EPSON CORPORATION
- Applicant Address: JP Tokyo
- Assignee: SEIKO EPSON CORPORATION
- Current Assignee: SEIKO EPSON CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@26103a14
- Main IPC: H02H3/087
- IPC: H02H3/087 ; H02M3/156 ; H02M1/32 ; H01L27/02 ; H02M1/00
Abstract:
The present overcurrent detection circuit includes: a comparative voltage generation unit that generates a comparative voltage that changes in accordance with a power supply voltage; and a comparison unit that generates a comparison result signal by comparing a drain-source voltage of a switching transistor with the comparative voltage.
Public/Granted literature
- US20180175607A1 OVERCURRENT DETECTION CIRCUIT, SEMICONDUCTOR APPARATUS, AND POWER SUPPLY APPARATUS Public/Granted day:2018-06-21
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