A gate driving apparatus for a power semiconductor device may include: a first off-resistor and a second off-resistor each having a first end connected to a gate of the power semiconductor device; a first off-switch configured to determine a connection state between a second end of the first off-resistor and a ground based on a gate driving signal for determining an on/off state of the power semiconductor device; a second off-switch configured to determine a connection state between a second end of the second off-resistor and the ground; an electric current detector configured to detect an electric current flowing from a collector (drain) of the power semiconductor device to an emitter (source) of the power semiconductor device; and a controller configured to determine an open/closed state of the second off-switch based on the gate driving signal and a magnitude of the electric current detected by the electric current detector.