Invention Grant
- Patent Title: Vapor deposition source and vapor deposition device for producing vapor deposition film with high material usage efficiency
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Application No.: US15761169Application Date: 2016-09-20
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Publication No.: US10760155B2Publication Date: 2020-09-01
- Inventor: Satoshi Inoue , Shinichi Kawato , Manabu Niboshi , Yuhki Kobayashi
- Applicant: Sharp Kabushiki Kaisha
- Applicant Address: JP Sakai
- Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee: SHARP KABUSHIKI KAISHA
- Current Assignee Address: JP Sakai
- Agency: Keating & Bennett, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@31dbb464
- International Application: PCT/JP2016/077623 WO 20160920
- International Announcement: WO2017/051790 WO 20170330
- Main IPC: C23C14/24
- IPC: C23C14/24 ; H01L51/50 ; C23C14/04 ; H05B33/10 ; H05B33/14 ; C23C14/12 ; H01L51/00 ; H01L51/56

Abstract:
To provide a vapor deposition source of which material usage efficiency is higher as compared with the related art. A vapor deposition source (10) includes a vapor deposition particles ejecting unit (30) configured to include multistage of nozzle units layered apart from each other in a vertical direction, each of the nozzle units including at least one vapor deposition nozzle (32, 52), and at least one space part (43) provided between the multistage of vapor deposition nozzles, and a vacuum exhaust unit (14) connected with the at least one space part (43).
Public/Granted literature
- US20180258521A1 VAPOR DEPOSITION SOURCE, VAPOR DEPOSITION DEVICE, AND VAPOR DEPOSITION FILM PRODUCING METHOD Public/Granted day:2018-09-13
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