Invention Grant
- Patent Title: Chemical composition for tri-layer removal
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Application No.: US15723875Application Date: 2017-10-03
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Publication No.: US10761423B2Publication Date: 2020-09-01
- Inventor: Li-Min Chen , Kuo Bin Huang , Neng-Jye Yang , Chia-Wei Wu , Jian-Jou Lian
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/027
- IPC: H01L21/027 ; G03F7/075 ; G03F7/00 ; G03F7/09 ; G03F7/16 ; G03F7/42 ; G03F1/80 ; H01L21/02 ; G03F7/20 ; H01L21/311 ; H01L21/033 ; H01L21/768
Abstract:
A method includes forming a tri-layer. The tri-layer includes a bottom layer; a middle layer over the bottom layer; and a top layer over the middle layer. The top layer includes a photo resist. The method further includes removing the top layer; and removing the middle layer using a chemical solution. The chemical solution is free from potassium hydroxide (KOH), and includes at least one of a quaternary ammonium hydroxide and a quaternary ammonium fluoride.
Public/Granted literature
- US20190064658A1 Chemical Composition for Tri-Layer Removal Public/Granted day:2019-02-28
Information query
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