Invention Grant
- Patent Title: Memory circuit configuration
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Application No.: US16691175Application Date: 2019-11-21
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Publication No.: US10762952B2Publication Date: 2020-09-01
- Inventor: Shih-Lien Linus Lu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C11/418 ; G11C11/419 ; G11C8/10 ; G11C7/08 ; G11C11/412

Abstract:
A circuit includes a first cell in a first row of a memory array, a second cell in a second row of the memory array, and a data line perpendicular to the first row and the second row, intersecting each of the first cell and the second cell, and electrically coupled with each of the first cell and the second cell. The circuit is configured to simultaneously transfer data from the first cell and the second cell to the data line in a read operation on the first row.
Public/Granted literature
- US20200090735A1 MEMORY CIRCUIT CONFIGURATION Public/Granted day:2020-03-19
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