Invention Grant
- Patent Title: Memory array with reduced circuitry
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Application No.: US16218585Application Date: 2018-12-13
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Publication No.: US10762953B2Publication Date: 2020-09-01
- Inventor: Noam Jungmann , Donald W. Plass
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Timothy J. Singleton
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/419 ; G06F30/30 ; G11C11/412 ; G11C11/413 ; H01L27/11

Abstract:
A memory array is described herein that includes a static random-access memory (SRAM) array to store data. The memory array also includes a bit circuit to retrieve the data from the SRAM array, the bit circuit to be operated with a clock signal that oscillates between a low state and an intermediate state, wherein the intermediate state is between the low state and a high state. Furthermore, the memory array includes a sense amplifier to amplify an output signal from the bit circuit indicating a value of the stored data, wherein the sense amplifier does not include a cross coupled positive field-effect transistor.
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