Invention Grant
- Patent Title: Plasma processing apparatus
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Application No.: US16140948Application Date: 2018-09-25
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Publication No.: US10763087B2Publication Date: 2020-09-01
- Inventor: Shuichi Takahashi , Takaharu Miyadate , Norinao Takasu , Etsuji Ito , Akihiro Yokota , Naohiko Okunishi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1255c446
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67 ; H01L21/311 ; H01L29/66

Abstract:
A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.
Public/Granted literature
- US20190096639A1 PLASMA PROCESSING APPARATUS Public/Granted day:2019-03-28
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