A heat treatment method for a semiconductor wafer includes: heat treatment in a heat treatment furnace of single wafer processing type having a susceptor capable of mounting a semiconductor wafer, the heat treatment being performed on a semiconductor wafer mounted on the susceptor disposed in the heat treatment furnace; and pre-heating to hold the temperature in the heat treatment furnace at a prescribed temperature lower than the temperature of the heat treatment for a prescribed period before the heat treatment, holding the semiconductor wafer separated from the susceptor during the pre-heating. This heat treatment method for a semiconductor wafer makes it possible to reduce the slip of a semiconductor wafer without largely lowering the productivity even in a high-temperature heat treatment.