An integrated circuit device includes a substrate having a first region and a second region, a first fin-isolation insulating portion in each of the first region and the second region and having a first width in a first direction, a pair of fin-type active regions spaced apart from each other in each of the first region and the second region with the first fin-isolation insulating portion therebetween, and extending in a straight line in the first direction, a pair of second fin-isolation insulating portions contacting, in each of the first region and the second region, two side walls of the first fin-isolation insulating portion, respectively, each of the two side walls facing the opposite sides in the first direction, and a plurality of gate structures extending in the second direction and comprising a plurality of dummy gate structures.