Invention Grant
- Patent Title: Hybrid microelectronic substrate and methods for fabricating the same
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Application No.: US15774221Application Date: 2015-12-09
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Publication No.: US10763215B2Publication Date: 2020-09-01
- Inventor: Robert Starkston , Robert L. Sankman , Scott M. Mokler , Richard C. Stamey
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP.
- International Application: PCT/US2015/064722 WO 20151209
- International Announcement: WO2017/099750 WO 20170615
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/683 ; H01L21/48 ; H01L23/498 ; H01L25/065

Abstract:
A hybrid microelectronic substrate may be formed by the incorporation of a high density microelectronic patch substrate within a lower density microelectronic substrate. The hybrid microelectronic substrate may allow for direct flip chip attachment of a microelectronic device having high density interconnections to the high density microelectronic patch substrate portion of the hybrid microelectronic substrate, while allowing for lower density interconnection and electrical routes in areas where high density interconnections are not required.
Public/Granted literature
- US20190057937A1 HYBRID MICROELECTRONIC SUBSTRATE AND METHODS FOR FABRICATING THE SAME Public/Granted day:2019-02-21
Information query
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