Invention Grant
- Patent Title: Semiconductor memory device
-
Application No.: US15929102Application Date: 2019-02-05
-
Publication No.: US10763272B2Publication Date: 2020-09-01
- Inventor: Wataru Sakamoto , Ryota Suzuki , Tatsuya Okamoto , Tatsuya Kato , Fumitaka Arai
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6c283893 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@29b012b
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; G11C16/04 ; H01L29/66 ; H01L29/792 ; H01L23/528 ; H01L27/11519 ; H01L29/06
Abstract:
A semiconductor memory device includes two first electrode films, a first column and a second insulating film. The two first electrode films extend in a first direction and are separated from each other in a second direction. The first column is provided between the two first electrode films and has a plurality of first members and a plurality of insulating members. Each of the first members and each of the insulating members are arranged alternately in the first direction. One of the plurality of first members has a semiconductor pillar, a second electrode film and a first insulating film provided between the semiconductor pillar and the second electrode film. The semiconductor pillar, the first insulating film and the second electrode film are arranged in the second direction. The second insulating film is provided between the first column and one of the two first electrode films.
Public/Granted literature
- US20190181150A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2019-06-13
Information query
IPC分类:
