Invention Grant
- Patent Title: Semiconductor device and method for forming the same
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Application No.: US16277585Application Date: 2019-02-15
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Publication No.: US10763288B1Publication Date: 2020-09-01
- Inventor: Hsin-Hui Lee , Han-Liang Tseng , Jiunn-Liang Yu , Kwang-Ming Lin , Yin Chen , Si-Twan Chen , Hsueh-Jung Lin , Wen-Chih Lu , Ting-Jung Lu
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/00 ; H01L27/146 ; H01L27/32 ; H01L31/0216 ; H01L29/786

Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate. The substrate includes a plurality of pixels. The semiconductor device also includes a light collimator layer disposed on the substrate. The light collimator layer includes a transparent connection feature disposed on the substrate, and a plurality of transparent pillars disposed on the transparent connection feature. The plurality of transparent pillars cover the plurality of pixels, and the transparent connection feature connects to the plurality of transparent pillars. The plurality of transparent pillars and the transparent connection feature are made of a first material which includes a transparent material. The light collimator layer also includes a plurality of first light-shielding features disposed on the transparent connection feature. The top surface of one of the transparent pillars is level with the top surface of one of the first light-shielding features.
Public/Granted literature
- US20200266226A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2020-08-20
Information query
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