- Patent Title: Epitaxial semiconductor material grown with enhanced local isotropy
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Application No.: US16151938Application Date: 2018-10-04
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Publication No.: US10763328B2Publication Date: 2020-09-01
- Inventor: Omur Isil Aydin , Judson Holt , Lakshmanan Vanamurthy , Tobias Heyne , Pei-Yu Chou , Cäcilia Brantz
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Thompson Hine LLP
- Agent Francois Pagette
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/84 ; H01L27/12 ; H01L29/04 ; H01L21/02 ; H01L21/265 ; H01L29/167
Abstract:
Structures for a field-effect transistor and methods for fabricating a structure for a field-effect transistor. A first epitaxial layer has a first surface and a second surface inclined relative to the first surface. A surface layer is arranged on the first and second surfaces of the first epitaxial layer. A second epitaxial layer is arranged over the surface layer on the first and second surfaces of the first epitaxial layer. A portion of the first epitaxial layer defines an interface with the surface layer. The portion of the first epitaxial layer contains a first concentration of a dopant. The surface layer contains a second concentration of the dopant that is greater than the first concentration of the dopant in the portion of the first epitaxial layer.
Public/Granted literature
- US20200111870A1 EPITAXIAL SEMICONDUCTOR MATERIAL GROWN WITH ENHANCED LOCAL ISOTROPY Public/Granted day:2020-04-09
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