Invention Grant
- Patent Title: Growing Groups III-V lateral nanowire channels
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Application No.: US16129329Application Date: 2018-09-12
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Publication No.: US10763340B2Publication Date: 2020-09-01
- Inventor: Sanghoon Lee , Effendi Leobandung , Renee Mo , Brent A. Wacaser
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/06 ; H01L29/786 ; H01L29/04 ; H01L29/423 ; H01L29/20 ; B82Y10/00 ; H01L29/775 ; H01L29/78 ; H01L29/08 ; H01L21/762 ; H01L21/306 ; H01L21/308 ; H01L21/02 ; H01L21/265 ; H01L21/8258
Abstract:
In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal to the direction of the silicon. A nanowire is grown directly on at least one of the sidewalls of the silicon and is formed from a material selected from Groups III-V. Only one end of the nanowire directly contacts the silicon.
Public/Granted literature
- US20190013393A1 GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS Public/Granted day:2019-01-10
Information query
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