Invention Grant
- Patent Title: Fin field effect transistor (FinFET) device structure with stop layer and method for forming the same
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Application No.: US16050703Application Date: 2018-07-31
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Publication No.: US10763362B2Publication Date: 2020-09-01
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L21/28 ; H01L21/283 ; H01L29/06 ; H01L29/423 ; H01L29/66
Abstract:
A FinFET device structure and method for forming the same are provided. The Fin PET device structure includes a stop layer formed over a substrate and a fin structure formed over the stop layer. The FinFET device structure includes a gate structure formed over the fin structure and a source/drain (S/D) structure adjacent to the gate structure. A bottom surface of the S/D structure is located at a position that is higher than or level with a bottom surface of the stop layer.
Public/Granted literature
- US20180337279A1 Fin Field Effect Transistor (FINFET) Device Structure with Stop Layer and Method for Forming the Same Public/Granted day:2018-11-22
Information query
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