Invention Grant
- Patent Title: Gradient doped region of recessed fin forming a FinFET device
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Application No.: US15949273Application Date: 2018-04-10
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Publication No.: US10763363B2Publication Date: 2020-09-01
- Inventor: Jyun-Hao Lin , Chun-Feng Nieh , Huicheng Chang , Yu-Chang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/66 ; H01L29/08 ; H01L29/167 ; H01L29/36 ; H01L21/265 ; H01L29/165 ; H01L27/092 ; H01L21/8238 ; H01L21/02 ; H01L27/11 ; H01L21/306
Abstract:
An embodiment is a method of manufacturing a semiconductor device. The method includes forming a fin on a substrate. A gate structure is formed over the fin. A recess is formed in the fin proximate the gate structure. A gradient doped region is formed in the fin with a p-type dopant. The gradient doped region extends from a bottom surface of the recess to a vertical depth below the recess in the fin. A source/drain region is formed in the recess and on the gradient doped regions.
Public/Granted literature
- US20190312143A1 Gradient Doped Region of Recessed Fin Forming a FinFET Device Public/Granted day:2019-10-10
Information query
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