Invention Grant
- Patent Title: Latch circuit
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Application No.: US16407757Application Date: 2019-05-09
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Publication No.: US10763834B2Publication Date: 2020-09-01
- Inventor: Ho Young Shin
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6c29d130
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H03K3/037 ; H03K19/0185 ; G11C16/04 ; G11C16/08 ; G11C16/30 ; G11C16/14 ; G11C16/10

Abstract:
A latch circuit including: a first inverter having a first pull-up transistor connected between a first power supply node and a first output node, and a first pull-down transistor connected between a second power supply node and the first output node; a second inverter having a second pull-up transistor connected between the first power supply node and a second output node, and a second pull-down transistor connected between the second power supply node and the second output node; a first current control transistor connected between the first pull-up transistor and the first output node; a second current control transistor connected between the second pull-up transistor and the second output node; a third current control transistor connected between the first pull-down transistor and the first output node; and a fourth current control transistor connected between the second pull-down transistor and the second output node.
Public/Granted literature
- US20200119723A1 LATCH CIRCUIT Public/Granted day:2020-04-16
Information query
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