Invention Grant
- Patent Title: Gate control circuit and transistor drive circuit
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Application No.: US16559106Application Date: 2019-09-03
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Publication No.: US10763851B2Publication Date: 2020-09-01
- Inventor: Yukio Tsunetsugu
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: White & Case LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@49c9653b
- Main IPC: H03K17/567
- IPC: H03K17/567 ; H03K17/60 ; H03K19/0185

Abstract:
A gate control circuit has a first gate controller that controls a gate voltage of a first transistor connected between a first reference voltage node and an output node on the basis of a potential difference between the first reference voltage node and a second reference voltage node, a second gate controller that controls a gate voltage of a second transistor connected between the output node and a fourth reference voltage node. and a voltage adjustment circuit that temporarily increases the potential difference between the first reference voltage node and the second reference voltage node in a first period in which the voltage of the first reference voltage node is rising from an initial voltage and a second period in which the voltage of the first reference voltage node is falling from a normal voltage.
Public/Granted literature
- US20200220539A1 GATE CONTROL CIRCUIT AND TRANSISTOR DRIVE CIRCUIT Public/Granted day:2020-07-09
Information query
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