Invention Grant
- Patent Title: Method of manufacturing semiconductor material from mayenite
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Application No.: US16232033Application Date: 2018-12-25
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Publication No.: US10766784B2Publication Date: 2020-09-08
- Inventor: Shengwen Tang , Wenzhi Yu , Wei Zhou , Yang Li , Hubao A
- Applicant: Wuhan University
- Applicant Address: CN Wuhan
- Assignee: WUHAN UNIVERSITY
- Current Assignee: WUHAN UNIVERSITY
- Current Assignee Address: CN Wuhan
- Agency: Matthias Scholl P.C.
- Agent Matthias Scholl
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2387c578
- Main IPC: C01F17/00
- IPC: C01F17/00 ; C01F7/16 ; C30B13/34 ; C30B15/36 ; C30B29/20

Abstract:
A method of preparation of semiconductor material. The method includes: adding an organic substance containing a benzene ring and dodecacalcium hepta-aluminate (12CaO.7Al2O3 or C12A7) to a test tube, and sealing the test tube; heating the test tube to a temperature of 200-300° C., and holding the temperature for 1 to 3 hours; and continuously heating the test tube to a temperature of 900-1300° C., and holding the temperature for 10-120 hours.
Public/Granted literature
- US20200062606A1 METHOD OF MANUFACTURING SEMICONDUCTOR MATERIAL FROM MAYENITE Public/Granted day:2020-02-27
Information query
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