Invention Grant
- Patent Title: MEMS pressure gauge sensor and manufacturing method
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Application No.: US15753131Application Date: 2016-07-08
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Publication No.: US10768064B2Publication Date: 2020-09-08
- Inventor: Kevin Chau , Man Wong
- Applicant: INSTITUTE OF GEOLOGY AND GEOPHYSICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Beijing
- Assignee: CHINESE ACADEMY OF SCIENCES INSTITUTE OF GEOLOGY AND GEOPHYSICS
- Current Assignee: CHINESE ACADEMY OF SCIENCES INSTITUTE OF GEOLOGY AND GEOPHYSICS
- Current Assignee Address: CN Beijing
- Agency: Dergosits & Noah LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1ac1a6d8
- International Application: PCT/CN2016/000369 WO 20160708
- International Announcement: WO2017/028465 WO 20170223
- Main IPC: G01L9/00
- IPC: G01L9/00 ; G01L9/04 ; B81B7/00 ; G01B7/16 ; B81B3/00 ; B81C1/00 ; B81C3/00

Abstract:
The present invention relates to a MEMS pressure sensor die and its fabrication process. The pressure sensor comprises a chamber inside which a MEMS pressure sensor die is provided. The pressure sensor die comprises a handle, a device layer and a cap all connected together. A silicon oxide layer is formed between the handle and the device layer. Another silicon oxide layer is formed between the device layer and the cap. Recesses are respectively formed on the handle and the cap and face each other. The handle recess and the cap recess are connected to form a cavity. The device layer, which spans the cavity, further comprises a bridge on which a plurality of piezoresistive sensing elements are formed. The present pressure sensor is more immune to temperature effects. It is especially suitable for operating in a high temperature, high pressure environment and is capable of delivering accurate and reliable pressure measurements at low cost.
Public/Granted literature
- US20180275000A1 MEMS PRESSURE GAUGE SENSOR AND MANUFACTURING METHOD Public/Granted day:2018-09-27
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