Invention Grant
- Patent Title: Pellicle for EUV lithography and method of fabricating the same
-
Application No.: US15915363Application Date: 2018-03-08
-
Publication No.: US10768523B2Publication Date: 2020-09-08
- Inventor: Kee-Soo Nam , Chang-Hun Lee , Ju-Hee Hong , Chul-Kyun Park
- Applicant: S&S TECH Co., Ltd.
- Applicant Address: KR Daegu-si
- Assignee: S&S TECH CO., LTD.
- Current Assignee: S&S TECH CO., LTD.
- Current Assignee Address: KR Daegu-si
- Agency: Marquez IP Law Office, PLLC
- Agent Juan Carlos A. Marquez
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@60ebd94c com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1a744700
- Main IPC: G03F1/64
- IPC: G03F1/64 ; G03F7/20 ; G03F1/22 ; G03F1/62

Abstract:
Disclosed are a pellicle for an extreme ultraviolet (EUV) lithography, which is excellent in transmittance of EUV exposure light and mechanical strength, and a method of fabricating the same. The pellicle includes a support layer pattern; a buried oxide layer pattern formed on the support layer pattern; and a pellicle layer provided being supported by the buried oxide layer pattern. The pellicle may further include a reinforcement layer for reinforcing the mechanical strength of the pellicle layer, an auxiliary layer for additionally supplementing the mechanical strength of the reinforcement layer, and a heat dissipation layer for dissipating heat of the pellicle layer.
Public/Granted literature
- US20180259845A1 PELLICLE FOR EUV LITHOGRAPHY AND METHOD OF FABRICATING THE SAME Public/Granted day:2018-09-13
Information query