Invention Grant
- Patent Title: Memory circuit
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Application No.: US16534992Application Date: 2019-08-07
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Publication No.: US10770119B2Publication Date: 2020-09-08
- Inventor: Su-Chueh Lo , Ken-Hui Chen , Kuen-Long Chang , Ming-Chih Hsieh
- Applicant: MACRONIX International Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee: MACRONIX INTERNATIONAL CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C7/10 ; G11C7/06

Abstract:
A data receiving stage circuit of a memory circuit receives a serial input signal and a chip enable signal. A data writing circuit of the memory circuit generates at least one of a command signal and a data signal according to the serial input signal. A power supply circuit of the memory circuit generates an operating voltage for a memory cell array to perform a data access operation. A data output stage circuit of the memory circuit outputs a readout data. A controller of the memory circuit performs a switching operation of an operating state of the memory circuit according to a change of the chip enable signal. The controller determines a disable or enable state of the data receiving stage circuit, the data writing circuit, the power supply circuit, and the data output stage circuit according to the operating state.
Public/Granted literature
- US20200185010A1 MEMORY CIRCUIT Public/Granted day:2020-06-11
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