Invention Grant
- Patent Title: Memory system including a memory device that can determine optimum read voltage applied to a word line
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Application No.: US15446952Application Date: 2017-03-01
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Publication No.: US10770147B2Publication Date: 2020-09-08
- Inventor: Shohei Asami , Toshikatsu Hida
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1ed4f1d7
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/26 ; G11C11/56 ; G11C29/02 ; G11C29/52 ; H03M13/11 ; H03M13/15 ; G11C16/04 ; G11C29/12
Abstract:
A memory system includes a nonvolatile memory including a word line and a plurality of memory cells connected to the word line, and a controller configured to transmit to the nonvolatile memory, a command that causes the nonvolatile memory to search for an optimum read voltage for the plurality of memory cells connected to the word line.
Public/Granted literature
- US20180091170A1 MEMORY SYSTEM INCLUDING A MEMORY DEVICE THAT CAN DETERMINE OPTIMUM READ VOLTAGE APPLIED TO A WORD LINE Public/Granted day:2018-03-29
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