A charge pump drive circuit is disclosed. The charge pump drive circuit provides a switch signal to a charge pump which provides a memory with a read voltage and a read current. The charge pump drive circuit includes a read drive circuit and a standby drive circuit. The read drive circuit is powered by a first power supply and provides the charge pump with a switch signal when the memory is in an active reading state. The standby drive circuit is powered by a second power supply and provides the charge pump with a switch signal when the memory is in a read standby state. The first power supply provides a voltage level ranging from 1.6 V to 3.8 V, and the second power supply provides a voltage level of 1.5 V.