Invention Grant
- Patent Title: High frequency component
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Application No.: US16156184Application Date: 2018-10-10
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Publication No.: US10770223B2Publication Date: 2020-09-08
- Inventor: Issei Yamamoto
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@3d5781d9
- Main IPC: H01F27/36
- IPC: H01F27/36 ; H03H7/01 ; H05K1/02 ; H01F17/00 ; H01G2/06 ; H01F27/40 ; H01G4/005 ; H01G4/12 ; H01G4/40 ; H03H1/00 ; H05K3/46 ; H05K3/24 ; H05K1/09

Abstract:
The present disclosure is intended to reduce connection resistance between a shield film and a ground electrode, and to improve characteristics of the shield film. A high frequency component 1a includes a ceramic substrate 2, a ground electrode 3a disposed inside the ceramic substrate 2, a shield film 4 covering an upper surface 2a and lateral surfaces 2c of the ceramic substrate 2, and connecting portions 6a connecting the ground electrode 3a and the shield film 4, wherein the ground electrode 3a is formed using a conductive paste that contains a metal ingredient, powder, and a material constituting the ceramic substrate 2, and a weight rate of a metal ingredient in the connecting portions 6a is higher than that of the metal ingredient in the ground electrode 3a.
Public/Granted literature
- US20190043662A1 HIGH FREQUENCY COMPONENT Public/Granted day:2019-02-07
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