A substrate processing method according to an embodiment includes an etching process, a temperature-difference forming process, and a rinsing process. The etching process supplies an etchant onto a first surface of a substrate on which a pattern is formed to etch the pattern. The temperature-difference forming process makes, in parallel with the etching process, a temperature in a lower portion of the pattern lower than a temperature in an upper portion of the pattern. The rinsing process supplies rinse liquid onto the first surface after the etching process to replace the etchant remaining on the pattern with the rinse liquid.