Invention Grant
- Patent Title: Etching method
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Application No.: US16360469Application Date: 2019-03-21
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Publication No.: US10770308B2Publication Date: 2020-09-08
- Inventor: Shigeru Tahara , Nobuaki Seki , Takahiko Kato
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5e64d311
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/321 ; H01J37/32 ; H01L21/67 ; H01L21/683 ; C23F4/00 ; H01L21/3065
Abstract:
A method for etching a ruthenium film includes a first step of etching the ruthenium film by plasma processing using oxygen-containing gas, and a second step of etching the ruthenium film by plasma processing using chlorine-containing gas. The first step and the second step are alternately performed. In the first step and the second step, the ruthenium film is etched at a target control temperature for a target processing time that are determined based on a pre-obtained relation between an etching amount per one cycle including the first step and the second step as a set, a control temperature of the ruthenium film, and processing times of each of the first step and the second step.
Public/Granted literature
- US20190295856A1 ETCHING METHOD Public/Granted day:2019-09-26
Information query
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