Invention Grant
- Patent Title: Features for improving process uniformity in a millisecond anneal system
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Application No.: US15378580Application Date: 2016-12-14
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Publication No.: US10770309B2Publication Date: 2020-09-08
- Inventor: Alexandr Cosceev , Markus Hagedorn , Christian Pfahler
- Applicant: Mattson Technology, Inc. , Beijing E-Town Semiconductor Technology Co., Ltd.
- Applicant Address: US CA Fremont CN Beijing
- Assignee: MATTSON TECHNOLOGY, INC.,BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Current Assignee: MATTSON TECHNOLOGY, INC.,BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.
- Current Assignee Address: US CA Fremont CN Beijing
- Agency: Dority & Manning, P.A.
- Main IPC: H01L21/324
- IPC: H01L21/324 ; F27B5/04 ; F27B5/16 ; F27B5/18 ; H01L21/67 ; H01L21/687 ; H01L21/268 ; H05B3/00 ; F27B17/00
Abstract:
Systems and methods for improving process uniformity in a millisecond anneal system are provided. In some implementations, a process for thermally treating a substrate in a millisecond anneal system can include obtaining data indicative of a temperature profile associated with one or more substrates during processing in a millisecond anneal system. The process can include one or more of (1) changing the pressure inside the processing chamber of the millisecond anneal system; (2) manipulating the irradiation distribution by way of the refracting effect of a water window in the millisecond anneal system; (3) adjusting the angular positioning of the substrate; and/or (4) configuring the shape of the reflectors used in the millisecond anneal system.
Public/Granted literature
- US20170194163A1 Features for Improving Process Uniformity in a Millisecond Anneal System Public/Granted day:2017-07-06
Information query
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