Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US16137823Application Date: 2018-09-21
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Publication No.: US10770341B2Publication Date: 2020-09-08
- Inventor: Takahito Nakajima , Shinya Ito
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: White & Case LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2d53a304
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/762 ; H01L21/308 ; H01L21/3105 ; H01L21/311 ; H01L21/3065 ; H01L21/8234 ; H01L21/3213 ; H01L21/285
Abstract:
A method for manufacturing a semiconductor device according to an embodiment includes forming a first insulating film on a semiconductor substrate, the first insulating film being patterned; forming a trench in the semiconductor substrate using the first insulating film as a mask; depositing a second insulating film in the trench and on the first insulating film; removing the second insulating film on the first insulating film using a CMP method; removing a portion of the first insulating film; removing a portion of the second insulating film using isotropic etching; and removing a remaining portion of the first insulating film.
Public/Granted literature
- US20190295882A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2019-09-26
Information query
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