Invention Grant
- Patent Title: Semiconductor apparatus, method for manufacturing the same and electric power conversion device
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Application No.: US16159745Application Date: 2018-10-15
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Publication No.: US10770367B2Publication Date: 2020-09-08
- Inventor: Takuya Kitabayashi , Hiroshi Yoshida , Hidetoshi Ishibashi , Daisuke Murata
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6cc712d7
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/31 ; H01L23/12 ; H01L23/58 ; H01L23/492

Abstract:
A semiconductor apparatus includes: a substrate including a circuit pattern on an upper surface side and a metal plate on a lower surface side; a semiconductor device joined to the circuit pattern via a conductive component; a case located to surround the substrate; a sealing material sealing the semiconductor device and the substrate in a section surrounded by the case; and a bonding agent bonding the case and the metal plate on a side face of the substrate.
Public/Granted literature
- US20190304866A1 SEMICONDUCTOR APPARATUS, METHOD FOR MANUFACTURING THE SAME AND ELECTRIC POWER CONVERSION DEVICE Public/Granted day:2019-10-03
Information query
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