Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15300520Application Date: 2014-07-09
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Publication No.: US10770371B2Publication Date: 2020-09-08
- Inventor: Yoichi Hironaka , Masuo Koga
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- International Application: PCT/JP2014/068331 WO 20140709
- International Announcement: WO2016/006065 WO 20160114
- Main IPC: H01L23/40
- IPC: H01L23/40 ; H01L25/18 ; H01L23/053 ; H01L23/433 ; H01L25/07 ; H01L23/00

Abstract:
A base plate (1) made of a metal has a through-hole (2). An insulating substrate (3) is provided on the base plate (1). A semiconductor chip (4) is provided on the insulating substrate (3). A case (8) has a screw-hole (9) communicating with the through-hole (2), covers the insulating substrate (3) and the semiconductor chip (4), and is disposed on the base plate (1). A screw (11) made of a metal is inserted into the through-hole (2) and the screw-hole (9) to fix the case (8) to the base plate (1). A flexible material (12) having flexibility is filled in a cavity between a bottom surface of the screw-hole (9) in the case (8) and a distal end of the screw (11).
Public/Granted literature
- US20170170096A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-06-15
Information query
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