Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US16247054Application Date: 2019-01-14
-
Publication No.: US10770375B2Publication Date: 2020-09-08
- Inventor: Jun Shibata
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4177b32
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L23/31 ; H01L23/29 ; H01L21/56 ; H01L21/78

Abstract:
A semiconductor device according to one embodiment of the present invention includes a wire electrically connecting a die pad and a semiconductor chip mounted on the die pad to each other, and an encapsulation body encapsulating the semiconductor chip. The die pad includes a wire-bonding region to which the wire is connected and a through hole penetrating through the die pad in a thickness direction. The wire-bonding region is covered by a metal film partially covering the die pad. The through hole is formed at a position overlapping the metal film. The encapsulation body includes a first portion formed over the die pad, a second portion formed under the die pad, and a third portion buried in the through hole of the die pad, wherein the first portion and the second portion of the encapsulation body are connected with each other via the third portion.
Public/Granted literature
- US20190259687A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-08-22
Information query
IPC分类: