Invention Grant
- Patent Title: Semiconductor structure and method for fabricating the same
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Application No.: US16235013Application Date: 2018-12-28
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Publication No.: US10770396B2Publication Date: 2020-09-08
- Inventor: Fang-Ming Lee , Sheng-Wei Fu , Chung-Yeh Lee
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/768 ; H01L23/535 ; H01L29/66
Abstract:
A semiconductor structure includes a substrate, an epitaxial layer disposed on the substrate, a conductive feature disposed in the epitaxial layer having a protruding portion that is higher than the epitaxial layer, and a diffusion barrier layer disposed on sidewalls of the conductive feature.
Public/Granted literature
- US20200211964A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2020-07-02
Information query
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