Invention Grant
- Patent Title: Method for fabricating substrate structure and substrate structure fabricated by using the method
-
Application No.: US16400465Application Date: 2019-05-01
-
Publication No.: US10770447B2Publication Date: 2020-09-08
- Inventor: Ho Jin Lee , Seok Ho Kim , Kwang Jin Moon , Byung Lyul Park , Nae In Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@1105367c
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L23/00 ; H01L25/065 ; H01L21/308 ; H01L21/3065 ; H01L21/768 ; H01L21/67

Abstract:
There is provided a method for fabricating a substrate structure capable of enhancing process reproducibility and process stability by trimming a bevel region of a substrate using a wafer level process. The method includes providing a first substrate including first and second surfaces opposite each other and a first device region formed at the first surface, providing a second substrate including third and fourth surfaces opposite each other and a second device region at the third surface, bonding the first substrate and the second substrate to electrically connect the first device region and the second device region, and forming a trimmed substrate. The forming the trimmed substrate includes etching an edge region of the second substrate bonded to the first substrate.
Public/Granted literature
- US20190259744A1 METHOD FOR FABRICATING SUBSTRATE STRUCTURE AND SUBSTRATE STRUCTURE FABRICATED BY USING THE METHOD Public/Granted day:2019-08-22
Information query
IPC分类: