Invention Grant
- Patent Title: Manufacturing method of semiconductor device
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Application No.: US16148416Application Date: 2018-10-01
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Publication No.: US10770474B2Publication Date: 2020-09-08
- Inventor: Sang Hyon Kwak , Duk Eui Lee , Nam Gyu Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@4bbf2712
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L27/11582 ; H01L29/10 ; H01L21/768 ; H01L27/11565 ; H01L21/311 ; H01L21/02 ; H01L21/28
Abstract:
A manufacturing method of a semiconductor device includes: forming pillars in a first region of a stack structure in which interlayer insulating layers and sacrificial insulating layers are alternately stacked; forming a slit in a second region of the stack structure; and removing the sacrificial insulating layers in the first region. In the removing of the sacrificial insulating layers in the first region, a portion of each of the sacrificial insulating layers, which is adjacent to the slit, and a portion of each of the sacrificial insulating layers, which is disposed between the pillars, may be removed using different etching materials.
Public/Granted literature
- US20190319041A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2019-10-17
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