- Patent Title: Active switch array substrate and method for manufacturing the same
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Application No.: US16317045Application Date: 2017-12-04
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Publication No.: US10770488B2Publication Date: 2020-09-08
- Inventor: En-tsung Cho
- Applicant: HKC Corporation Limited , Chongqing HKC Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen CN Chongqing
- Assignee: HKC Corporation Limited,Chongqing HKC Optoelectronics Technology Co., Ltd.
- Current Assignee: HKC Corporation Limited,Chongqing HKC Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Shenzhen CN Chongqing
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@650d389f
- International Application: PCT/CN2017/114369 WO 20171204
- International Announcement: WO2018/103599 WO 20180614
- Main IPC: H01L27/12
- IPC: H01L27/12 ; G02F1/1368 ; G02F1/1343 ; G02F1/1362 ; H01L29/417 ; H01L29/66 ; H01L29/786 ; H01L29/10

Abstract:
The present disclosure provides a method for manufacturing an active switch array substrate, and the active switch array substrate, the method includes: providing a substrate; coating a first metal layer on the substrate; forming a gate electrode by treating the first metal layer; depositing an amorphous silicon layer on the substrate and the gate electrode; coating a second metal layer on the amorphous silicon layer; forming a patterned second metal layer; coating a passivation layer on the patterned second metal layer; forming a through hole in the passivation layer; coating a light permeability conductive layer on the passivation layer; and carrying out a fourth photolithography process to the light permeability conductive layer, the passivation layer, and the patterned second metal layer, to form a channel, a source electrode, and a drain electrode on the light permeability conductive layer, the passivation layer, and the patterned second metal layer.
Public/Granted literature
- US20190305015A1 Active Switch Array Substrate and Method for Manufacturing the Same Public/Granted day:2019-10-03
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