Invention Grant
- Patent Title: Structures and methods for embedded magnetic random access memory (MRAM) fabrication
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Application No.: US16264935Application Date: 2019-02-01
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Publication No.: US10770511B2Publication Date: 2020-09-08
- Inventor: Lawrence A. Clevenger , Nicholas A. Lanzillo , Michael Rizzolo , Theodorus E. Standaert
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L27/22 ; H01L43/08 ; G11C11/16 ; H01L43/12 ; H01L43/02
Abstract:
A magnetic random access memory (MRAM) device includes a conductor disposed in an insulating material of a lower wiring layer, a magnetic tunnel junction (MTJ) structure formed in an upper wiring layer, and a landing pad formed in an intermediary wiring layer between the lower and upper wiring layers, the landing pad extending from a top surface of the conductor to a height above the intermediary wiring layer, wherein the landing pad connects the MJT structure to the conductor.
Public/Granted literature
- US20190165042A1 STRUCTURES AND METHODS FOR EMBEDDED MAGNETIC RANDOM ACCESS MEMORY (MRAM) FABRICATION Public/Granted day:2019-05-30
Information query
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