Invention Grant
- Patent Title: Method and structure for dual sheet resistance trimmable thin film resistors
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Application No.: US15976357Application Date: 2018-05-10
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Publication No.: US10770538B2Publication Date: 2020-09-08
- Inventor: Christoph Andreas Othmar Dirnecker , Wolfgang Schwartz , Doug Weiser , Joel Martin Halbert , Joseph Anthony DeSantis , Karsten Jens Spinger
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Andrew R. Ralston; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522 ; H01L21/3213 ; H01L21/027 ; H01L21/268

Abstract:
A method of forming an electronic device includes forming an opening through a dielectric layer located over a first resistive layer, the first resistive layer having a first sheet resistance. A second resistive layer is deposited over the dielectric layer and into the opening. The second resistive layer has a second sheet resistance different from the first sheet resistance. A portion of the second resistive layer is removed, thereby forming first and second noncontiguous portions of the second resistive layer, wherein the second portion of the second resistive layer contacts the first resistive layer.
Public/Granted literature
- US20180261664A1 METHOD AND STRUCTURE FOR DUAL SHEET RESISTANCE TRIMMABLE THIN FILM RESISTORS Public/Granted day:2018-09-13
Information query
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