Invention Grant
- Patent Title: Semiconductor chip integrating high and low voltage devices
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Application No.: US16191070Application Date: 2018-11-14
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Publication No.: US10770543B2Publication Date: 2020-09-08
- Inventor: Hideaki Tsuchiko
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee: ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED
- Current Assignee Address: US CA Sunnyvale
- Agency: JDI Patent
- Agent Joshua Isenberg; Robert Pullman
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/8222 ; H01L21/8228 ; H01L21/8234 ; H01L21/761 ; H01L27/06 ; H01L27/082 ; H01L27/088 ; H01L29/66 ; H01L29/732 ; H01L29/78 ; H01L29/10 ; H01L29/735 ; H01L29/861 ; H01L29/423
Abstract:
The present invention is directed to a semiconductor chip comprising a high voltage device and a low voltage device disposed thereon. The chip may be formed in several different configurations. For example, the semiconductor chip may include a NPN bipolar transistor, PNP bipolar transistor, a diode, an N channel DMOS transistor and the like. the first doped well being configured as a base of the DMOS transistor, a P channel DMOS transistor and the like. These and other embodiments are described in further detail below.
Public/Granted literature
- US20190088740A1 SEMICONDUCTOR CHIP INTEGRATING HIGH AND LOW VOLTAGE DEVICES Public/Granted day:2019-03-21
Information query
IPC分类:
