Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16436753Application Date: 2019-06-10
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Publication No.: US10770569B2Publication Date: 2020-09-08
- Inventor: Wei-Yang Lo , Shih-Hao Chen , Mu-Tsang Lin , Tung-Wen Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/3065 ; H01L21/306 ; H01L29/08
Abstract:
A transistor includes a semiconductive fin having a channel portion, a gate stack over the channel portion of the semiconductive fin, source and drain structures on opposite sides of the gate stack and adjoining the semiconductive fin, and a sidewall structure extending along sidewalls of a body portion of the source structure. The source structure has a curved top, and the source structure has a top portion protruding over a top of the sidewall structure.
Public/Granted literature
- US20190312131A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-10-10
Information query
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