Invention Grant
- Patent Title: Surface emitting laser
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Application No.: US16381041Application Date: 2019-04-11
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Publication No.: US10770864B2Publication Date: 2020-09-08
- Inventor: Jonathan Wang , Pei-Chin Hsieh , Pei-Jih Wang , Shih-Chieh Cheng
- Applicant: Trend Lighting Corp.
- Applicant Address: TW Taoyuan
- Assignee: TREND LIGHTING CORP.
- Current Assignee: TREND LIGHTING CORP.
- Current Assignee Address: TW Taoyuan
- Agency: McClure, Qualey & Rodack, LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@7999384b
- Main IPC: H01S5/22
- IPC: H01S5/22 ; H01S5/183 ; H01S5/042 ; H01S5/02 ; H01S5/026 ; H01S5/18

Abstract:
A surface emitting laser includes a conductive substrate, a metal bonding layer, a laser structure layer, an epitaxial semiconductor reflection layer, and an electrode layer. The laser structure layer has an epitaxial current-blocking layer having a current opening. Currents are transmitting through the current opening. The epitaxial current-blocking layer is grown by a semiconductor epitaxy process to confine the range of the currents to form electric fields.
Public/Granted literature
- US20190237937A1 SURFACE EMITTING LASER Public/Granted day:2019-08-01
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