Invention Grant
- Patent Title: Power amplifier modules including transistor with grading and semiconductor resistor
-
Application No.: US16104114Application Date: 2018-08-16
-
Publication No.: US10771024B2Publication Date: 2020-09-08
- Inventor: Peter J. Zampardi, Jr. , Hongxiao Shao , Tin Myint Ko , Matthew Thomas Ozalas , David Steven Ripley , Philip John Lehtola
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US CA Irvine
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H03F3/213 ; H03F3/19 ; H03F1/02 ; H03F3/21 ; H03F3/195 ; H01L23/00 ; H01L21/768 ; H03F3/24 ; H01L23/552 ; H01L29/36 ; H01L29/66 ; H01L29/737 ; H01L29/812 ; H01L29/08 ; H01L29/205 ; H01L21/8252 ; H01L27/06 ; H01L23/498 ; H01L23/50 ; H03F3/60 ; H01L23/66 ; H01L29/20 ; H01L23/48 ; H01L21/48 ; H01L21/56 ; H01L21/78 ; H01L21/8249 ; H01L21/66 ; H01L23/31 ; H01L23/522 ; H03F3/187 ; H03F3/347 ; H03F1/56 ; H03F3/45 ; H01L29/8605 ; H01L27/092 ; H01L29/06 ; H01L29/10
Abstract:
One aspect of this disclosure is a power amplifier module that includes a power amplifier on a substrate and a semiconductor resistor on the substrate. The power amplifier includes a bipolar transistor having a collector, a base, and an emitter. The collector has a doping concentration of at least 3×1016 cm−3 at an interface with the base. The collector also has at least a first grading in which doping concentration increases away from the base. The semiconductor resistor includes a resistive layer that that includes the same material as a layer of the bipolar transistor. Other embodiments of the module are provided along with related methods and components thereof.
Public/Granted literature
- US20190158045A1 POWER AMPLIFIER MODULES INCLUDING TRANSISTOR WITH GRADING AND SEMICONDUCTOR RESISTOR Public/Granted day:2019-05-23
Information query
IPC分类:
