Invention Grant
- Patent Title: Reactor for depositing polycrystalline silicon
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Application No.: US15768348Application Date: 2016-10-11
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Publication No.: US10774443B2Publication Date: 2020-09-15
- Inventor: Heinz Kraus , Christian Kutza
- Applicant: Wacker Chemie AG
- Applicant Address: DE Munich
- Assignee: WACKER CHEMIE AG
- Current Assignee: WACKER CHEMIE AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@32599291
- International Application: PCT/EP2016/074317 WO 20161011
- International Announcement: WO2017/064048 WO 20170420
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C30B29/06 ; C01B33/035
Abstract:
The yield and quality of polysilicon rods produced in the Siemens process are increased by preventing pieces of silicon too large to be removed by flushing with gas from entering reaction gas inlets and offgas outlets by means of protective elements installed in the inlets and/or outlets.
Public/Granted literature
- US20180298521A1 REACTOR FOR DEPOSITING POLYCRYSTALLINE SILICON Public/Granted day:2018-10-18
Information query
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