Invention Grant
- Patent Title: Wafer production method
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Application No.: US15397309Application Date: 2017-01-03
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Publication No.: US10774445B2Publication Date: 2020-09-15
- Inventor: Kazuya Hirata
- Applicant: DISCO CORPORATION
- Applicant Address: JP Tokyo
- Assignee: DISCO CORPROATION
- Current Assignee: DISCO CORPROATION
- Current Assignee Address: JP Tokyo
- Agency: Green Burns & Crain Ltd.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5fd828e3
- Main IPC: C30B33/04
- IPC: C30B33/04 ; C30B29/30 ; B23K26/53 ; C30B33/06

Abstract:
A wafer production method for producing a wafer from a lithium tantalate ingot includes a step of irradiating, from an end face of a lithium tantalate ingot which is a 42-degree rotation Y cut ingot having an orientation flat formed in parallel to a Y axis, a laser beam of a wavelength having transparency to lithium tantalate with a focal point of the laser beam positioned in the inside of the ingot to form a modified layer in the inside of the ingot while the ingot is fed for processing, and a step of applying external force to the ingot to peel off a plate-shaped material from the ingot to produce a wafer. At the step of forming a modified layer, the ingot is relatively fed for processing in a direction parallel or perpendicular to the orientation flat.
Public/Granted literature
- US20170198411A1 WAFER PRODUCTION METHOD Public/Granted day:2017-07-13
Information query
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