Invention Grant
- Patent Title: Integrated circuit structure
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Application No.: US16205039Application Date: 2018-11-29
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Publication No.: US10776557B2Publication Date: 2020-09-15
- Inventor: Po-Hsiang Huang , Sheng-Hsiung Chen , Fong-Yuan Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: G06F30/398
- IPC: G06F30/398 ; H01L27/02 ; G03F1/36 ; H01L27/118 ; G06F30/392 ; G06F30/394 ; G06F111/04 ; G06F119/18

Abstract:
A semiconductor structure includes first and second device regions. The first device region contains an entirety of a first active area of a first logic device, the second device region contains an entirety of a second active area of a second logic device, and the second device region shares a boundary with the first device region. The semiconductor structure also includes a first metal zero pin positioned partially within the first device region, partially within the second device region, and extending across the boundary, and a via contacting the first metal zero pin. A distance from the center of the via to the boundary is less than or equal to a first predetermined distance, and the via is electrically connected to one of the first logic device or the second logic device.
Public/Granted literature
- US20190171788A1 INTEGRATED CIRCUIT STRUCTURE Public/Granted day:2019-06-06
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