Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16501539Application Date: 2019-04-26
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Publication No.: US10777290B2Publication Date: 2020-09-15
- Inventor: Atsushi Umezaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@c76a2b3
- Main IPC: G11C19/00
- IPC: G11C19/00 ; G11C19/28 ; H01L27/088 ; H01L27/12 ; G09G3/20 ; H01L27/15 ; H01L29/786 ; G09G3/36 ; H01L27/32

Abstract:
A semiconductor device which shifts a low-level signal is provided. In an example, a first transistor including a first terminal electrically connected to a first wiring and a second terminal electrically connected to a second wiring, a second transistor including a first terminal electrically connected to a third wiring and a second terminal electrically connected to the second wiring, a third transistor including a first terminal electrically connected to a fourth wiring and a second terminal electrically connected to a gate of the second transistor, a fourth transistor including a first terminal electrically connected to a fifth wiring, a second terminal electrically connected to a gate of the third transistor, and a gate electrically connected to a sixth wiring, and a first switch including a first terminal electrically connected to the third wiring and a second terminal electrically connected to a gate of the first transistor are included.
Public/Granted literature
- US20190318795A1 Semiconductor device Public/Granted day:2019-10-17
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