Semiconductor device, memory test method for semiconductor device, and test pattern generation program
Abstract:
To overcome a problem of increase of test time related to BIST in a conventional semiconductor device, a semiconductor device according to one embodiment includes a plurality of memory arrays having different sizes, a test pattern generation circuit that outputs a test pattern for the memory arrays, and a memory interface circuit that is provided for every memory array and converts an access address. The memory interface circuit shifts a test address output from the test pattern generation circuit in accordance with a shift amount set for every memory array, thereby converting the test address to an actual address of a memory array to be tested.
Information query
Patent Agency Ranking
0/0