Invention Grant
- Patent Title: Semiconductor device, memory test method for semiconductor device, and test pattern generation program
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Application No.: US16378056Application Date: 2019-04-08
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Publication No.: US10777293B2Publication Date: 2020-09-15
- Inventor: Tomonori Sasaki , Tatsuya Saito , Hideshi Maeno , Takeshi Ueki
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@5da5cab6
- Main IPC: G11C29/26
- IPC: G11C29/26 ; G11C29/56 ; G01R31/3185 ; G11C29/18

Abstract:
To overcome a problem of increase of test time related to BIST in a conventional semiconductor device, a semiconductor device according to one embodiment includes a plurality of memory arrays having different sizes, a test pattern generation circuit that outputs a test pattern for the memory arrays, and a memory interface circuit that is provided for every memory array and converts an access address. The memory interface circuit shifts a test address output from the test pattern generation circuit in accordance with a shift amount set for every memory array, thereby converting the test address to an actual address of a memory array to be tested.
Public/Granted literature
- US20190333598A1 SEMICONDUCTOR DEVICE, MEMORY TEST METHOD FOR SEMICONDUCTOR DEVICE, AND TEST PATTERN GENERATION PROGRAM Public/Granted day:2019-10-31
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