Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16228814Application Date: 2018-12-21
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Publication No.: US10777473B2Publication Date: 2020-09-15
- Inventor: Yoshihiro Kodaira
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@2394075b
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/051 ; H01L23/498 ; H01L23/14 ; H01L23/10

Abstract:
Provided is a semiconductor device having: a terminal portion having a through hole is formed on a principal surface portion; and a casing portion in which an opening to make the principal surface portion of the terminal portion exposed is provided, wherein the opening has a corner portion corresponding to a corner of the principal surface portion of the terminal portion, wherein the casing portion has a thick portion, in which thickness of a resin may be greater than that of a middle portion between adjacent corner portions across two sides forming the corner portion, in a surrounding area of the opening. Furthermore, a slit portion extending outward from the corner portion may be formed in the casing portion. At least a part of the outline of the slit portion as viewed from the upper surface direction of the casing portion may be curved.
Public/Granted literature
- US20190157171A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-05-23
Information query
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