Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16119945Application Date: 2018-08-31
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Publication No.: US10777511B2Publication Date: 2020-09-15
- Inventor: Kazuhiro Ooshima
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@442d12f4
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L23/00 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L21/768

Abstract:
A semiconductor device includes a semiconductor substrate, at least two first films, a bridge portion, and a conductive member. The two first films are spaced apart from each other, along a first direction which is an in-plane direction of the semiconductor substrate, and along a second direction which is in the in-plane direction of the semiconductor substrate and is perpendicular to the first direction. The bridge portion connects portions of side facing surfaces of the two first films to each other, and has a flat bottom surface. The conductive member is provided under the bottom surface of the bridge portion.
Public/Granted literature
- US20190287925A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-09-19
Information query
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